5th INTERNATIONAL CONFERENCE ON THE FRONTIERS OF PLASMA PHYSICS AND TECHNOLOGY

18-22 April 2011, Singapore, Republic of Singapore


REDUCTION IN L10 PHASE TRANSITION TEMPERATURE OF PLD GROWN FEPT THIN BY PRE-ANNEALING PULSE LASER EXPOSURE

Y. Wang, R. S. Rawat, A. Bisht, P. Lee, Usman Ilyas, S.V. Springham and T.L. Tan

NSSE, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616


Abstract.  FePt thin films are a strong candidate for magnetic data storage applications. To achieve high areal density of data storage, low L10 phase transition temperature is required. This will decrease the magnetic nanoparticle agglomeration and grain growth which increases with higher transition temperatures. To decrease the transition temperature, pulsed laser exposure on FePt thin films is performed before thermal annealing. This presentation provides comparison of phase transition, magnetic properties and surface mophology of FePt thin films exposed with pulsed laser at different laser energies. The FePt thin films are grown with laser induced plasma system, Pulsed Laser Deposition (PLD) system.

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