Abstract.  In this paper we have attempted to deposit smooth carbon films with roughness of 0.05 nm on silicon carbide film. Coherent make 248nm excimer laser with beam width of 20ns was used in this process. Other laser and substrate process parameters have been optimized to form a smooth carbon films for electronics application. Both phase, microstructural and electrical properties of the film have been characterized by XRD, X-ray reflectivity studies, SEM etc and the results will be discussed in the paper.