BELGIUM - LARN

LABORATOIRE D'ANALYSES PAR REACTIONS NUCLÉAIRES
FACULTÉS UNIVERSITAIRES NOTRE-DAME DE LA PAIX

61 Rue de Bruxelles, B-5000 Namur

Telephone: +32 (0)81 72 5475
Telefax: +32 (0)81 72 5474
E-mail: guy.demortier@fundp.ac.be
URL:   http://www.fundp.ac.be/

Director: Demortier, Guy
Associate Director: Bodart, Franz

Nuclear Reaction Analysis
Demortier, Guy (Prof.)
Bodart, Franz (Prof.)
Morciaux, Yvon (Accelerator Engineering)
Nackers, Jules (Technician)
Terwagne, Guy (Dr.) (Senior Research Scientist)

Surface Modification of Materials by Diffusion
Demortier, Guy (Prof.) (Leader)

Archaeometry: Ion beam study of archaeological material
Demortier, Guy (Prof.)(Leader)

Nuclear Reactions for Astrophysics
Terwagne, Guy (Dr.)(Leader)
Galloy, Olivier

Surface Modification of Materials by Ion Implantation and Physical Deposition
Bodart, Franz (Prof.) (Leader)
Colaux, Julie
Mathot, Gilles
Terwagne, Guy (Dr.)


Research activities:
Using facilities installed since 1970, and modified in 1998 to accelerate all kinds of ion species (from H to Pb), the staff of LARN has a long experience in the analysis of materials by a large choice of ion beam techniques. Applications to metals and alloys, semiconductors, glass and various insulators, biological and archaeological materials, etc. have been published in over 350 papers.

Rutherford backscattering (RBS) is used for depth profile analysis of heavy elements in various matrices, channeling RBS for the study of interstitials in crystals.

Proton-Induced X-ray Emission (PIXE) is applied to the elemental analysis (down to traces of medium and heavy elements) in all kinds of materials.

Proton-Induced Gamma-ray Emission (PIGE) and Nuclear Reaction Analysis (NRA) are specially useful for the analysis and the depth profiling of light elements: a complementary technique to RBS.

Ion implantation facilities at low and high energy give us the possibility to simulate damages. All these techniques would be applied in the next future to material characterization using a microbeam (2 μm x 2 μm).

IAEA 2001
2001-10-29