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(FTP1/04) Investigation of Irradiated Ferroelectric Thin Films

R. Bittner¹⁾, K. Humer¹⁾, H. W. Weber¹⁾, M. Tyunina²⁾³⁾, L. Cakare⁴⁾²⁾, A. Sternberg^2)
 
1) Atomic Institute of the Austrian Universities, Vienna, Austria
²⁾ Institute of Solid State Physics, University of Latvia, Riga, Latvia
³⁾ Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, Finland
⁴⁾ Jozef Stefan Institute, Ljubljana, Slovenia

Abstract.  Irradiation effects on highly oriented Pb₁Zr_0.53Ti_0.47O₃ (PZT), Pb_0.94La_0.06Zr_0.65Ti_0.35O₃ (PLZT-6), and Pb₁Zr₁O₃ (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated with respect to their possible application as a temperature sensitive element in a new bolometer system for ITER. The PZT and PZ films were deposited by a sol-gel technique on a Pt/TiO₂/Si substrate, whereas the PLZT-6 film was deposited by pulsed laser deposition (PLD) on a LSCO/MgO (100) substrate. The dielectric properties, i.e. the hysteresis loop and the dielectric constant of the films, were investigated in a frequency range from 20 Hz to 100 kHz and at temperatures up to 300 ^oC, before and after neutron irradiation to a fast neutron fluence of 5×10²¹m^{- 2} ( E > 0.1MeV). The dielectric constant was measured during cooling with 2 ^oC.min^-1. The dielectric properties of the films were measured before and after annealing to 300 ^oC.

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